Transistor performance improves due to quantum confinement effects

From PhysOrg.com:

Manufacturing on the nanoscale has come a long way since Feynman’s visions of nanotechnology more than 50 years ago. Since then, studies have demonstrated how low-dimensional structures, such as nanowires and quantum dots, have unique properties that can improve the performance of a variety of devices. In the latest study in this area, researchers have fabricated transistors made with exceptionally thin silicon nanowires that exhibit high performance due to quantum confinement effects in the nanowires.

Continued

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